#include "Int_EEPROM24xx.h" static IntEEPROM24xx_Config_t g_cfg; static IntEEPROM_I2CRead_t g_read_fn; static IntEEPROM_I2CWrite_t g_write_fn; static IntEEPROM_DelayMs_t g_delay_fn; static uint8_t g_inited; IntEEPROM_Result_t Int_EEPROM24xx_Init(const IntEEPROM24xx_Config_t *cfg, IntEEPROM_I2CRead_t read_fn, IntEEPROM_I2CWrite_t write_fn, IntEEPROM_DelayMs_t delay_fn) { if (cfg == NULL || read_fn == 0 || write_fn == 0) { return INT_EEPROM_ERR_ARG; } if (cfg->page_size == 0u || (cfg->mem_addr_size != 1u && cfg->mem_addr_size != 2u)) { return INT_EEPROM_ERR_ARG; } g_cfg = *cfg; g_read_fn = read_fn; g_write_fn = write_fn; g_delay_fn = delay_fn; g_inited = 1u; return INT_EEPROM_OK; } /* 直接透传到用户提供的总线读回调。 */ IntEEPROM_Result_t Int_EEPROM24xx_Read(uint32_t mem_addr, uint8_t *buf, uint16_t len) { if (g_inited == 0u || buf == 0 || len == 0u) { return INT_EEPROM_ERR_ARG; } return g_read_fn(g_cfg.dev_addr, mem_addr, g_cfg.mem_addr_size, buf, len, g_cfg.timeout_ms); } /* 按页拆分写入,避免跨页写导致 EEPROM 数据回卷或写失败。 */ IntEEPROM_Result_t Int_EEPROM24xx_Write(uint32_t mem_addr, const uint8_t *buf, uint16_t len) { uint16_t written = 0; uint16_t chunk; uint32_t cur_addr; uint16_t page_off; uint16_t room; IntEEPROM_Result_t st; if (g_inited == 0u || buf == 0 || len == 0u) { return INT_EEPROM_ERR_ARG; } while (written < len) { /* 计算当前页内偏移和本次最多可写长度。 */ cur_addr = mem_addr + written; page_off = (uint16_t)(cur_addr % g_cfg.page_size); room = (uint16_t)(g_cfg.page_size - page_off); chunk = (uint16_t)(((len - written) < room) ? (len - written) : room); /* 实际总线写由平台适配层完成。 */ st = g_write_fn(g_cfg.dev_addr, cur_addr, g_cfg.mem_addr_size, (const uint8_t *)(buf + written), chunk, g_cfg.timeout_ms); if (st != INT_EEPROM_OK) { return st; } if (g_delay_fn != 0 && g_cfg.write_cycle_ms > 0u) { /* EEPROM 页写后通常需要写周期时间。 */ g_delay_fn(g_cfg.write_cycle_ms); } written = (uint16_t)(written + chunk); } return INT_EEPROM_OK; }